| PART |
Description |
Maker |
| N256S0818HDA N256S0830HDA N256S08XXHDA N256S0818HD |
32K X 8 STANDARD SRAM, 25 ns, PDSO8
256Kb Low Power Serial SRAMs 32K 】 8 bit Organization
256Kb Low Power Serial SRAMs 32K × 8 bit Organization
|
AMI SEMICONDUCTOR
|
| HM62W16256BLTT/BLTT-XXSL |
Low Power SRAMs
|
Hitachi Semiconductor
|
| HM62V8100LBPI/LBPI-XXSL HM62V8100LTTI/LTTI-XXSL |
Low Power SRAMs
|
Hitachi Semiconductor
|
| HM62V8512BLTT-XXUL HM62V8512BLTT/BLTT-XXSL HM62V85 |
Low Power SRAMs
|
Hitachi Semiconductor
|
| HM628512CLTTI HM628512CLFPI |
Low Power SRAMs
|
Hitachi Semiconductor
|
| N64S818HA N64S818HAS21I N64S818HAS21IT N64S818HAT2 |
64Kb Low Power Serial SRAMs 8K 隆驴 8 bit Organization
64Kb Low Power Serial SRAMs 8K × 8 bit Organization
|
ON Semiconductor
|
| N25S818HAT21I N25S818HAT21IT N25S818HAS21I N25S818 |
256Kb Low Power Serial SRAMs 32K 隆驴 8 bit Organization
256Kb Low Power Serial SRAMs 32K ? 8 bit Organization
256Kb Low Power Serial SRAMs 32K × 8 bit Organization
|
ON Semiconductor
|
| N25S830HAT22I N25S830HAT22IT N25S830HA N25S830HAS2 |
256Kb Low Power Serial SRAMs 32K 隆驴 8 bit Organization
256Kb Low Power Serial SRAMs 32K ? 8 bit Organization
256Kb Low Power Serial SRAMs 32K × 8 bit Organization
|
ON Semiconductor
|
| GS88236BD-333I GS88218 GS88218BB-150 GS88218BB-150 |
9Mb Burst SRAMs
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| IMP1233D IMP1810 IMP1811 IMP1812 IMP1815 IMP1816 I |
4.125V power reset
RELAY 024VDC 01A DPDT-XX FORM:2C UC
Bi-Lobe Standard Metal Shell Nano Offset Connector
Low Power 5V/3.0V P Reset
Low Power/ 5V/ P Reset
Low Power, 5V, 楼矛P Reset
Low Power 5V P Reset
Low Power, 5V, P Reset
Low Power, 5V, μP Reset
4.375V power reset
|
IMP INC.
IMP Inc
IMP[IMP, Inc]
IMP[IMP Inc]
|
| GS816218 GS816236BB-250I GS816218BB-150 GS816218BB |
18Mb Burst SRAMs
1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
http://
|
| IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100
25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
|
Integrated Device Technology, Inc.
IDT
|
